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  4. N-X共掺p型ZnO薄膜的研究进展

材料导报, 2011, 25(23): 49-54.

N-X共掺p型ZnO薄膜的研究进展

李万俊 1, , 孔春阳 2, , 秦国平 3, , 阮海波 4, , 杨天勇 5, , 梁薇薇 6, , 孟祥丹 7, , 赵永红 8,

1.重庆师范大学光学工程实验室,重庆400047

2.重庆师范大学光学工程实验室,重庆400047

3.重庆师范大学光学工程实验室,重庆400047;重庆大学物理学院,重庆400030

4.重庆师范大学光学工程实验室,重庆400047;重庆大学物理学院,重庆400030

5.重庆师范大学光学工程实验室,重庆400047

6.重庆师范大学光学工程实验室,重庆400047

7.重庆师范大学光学工程实验室,重庆400047

8.重庆师范大学光学工程实验室,重庆400047

关键词： p型ZnO薄膜 , N-X共掺 , 稳定性

Latest Progress of N-X Codoped p-Type ZnO Thin Films

获得高质量稳定的p型ZnO薄膜是实现ZnO基光电器件化的关键.目前,国际上公认V族元素中的N替代O位(No)是实现p型ZnO较理想的掺杂途径.但p-ZnO:N薄膜的导电性能会随着时间、光照、温度条件发生变化,稳定性不足.大量的理论和实验研究表明N基二元共掺( N-X)可以提高N在ZnO薄膜中的固溶度,浅化N的受主能级,且在很大程度上能够改善p型ZnO的导电性能,有利于获得稳定的p型ZnO薄膜.为此,从N基施主受主共掺、双受主共掺以及其它共掺方面综述了N-X共掺p型ZnO薄膜的研究现状.

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