本文着重讨论了掺镁SrTiO3陶瓷的电导与温度和环境氧分压之间的关系．在SrTiO3中镁的含量分别选为10、20、30、40和50mol％，所有样品均在20～900℃的温度区间和3．8×10－4～2．6×10－1atm的氧分压范围被测试．结果表明，所有样品均呈现p型半导体的导电特征，样品在不同温度下的R∝P-1/mO2关系中的m与镁的含量和温度有关．根据X光衍射图和缺陷化学理论，实验结果得到适当的解释．
The dependence of the electrical conduction of Mg-doped SrTiO3 ceramics on the temperature and the oxygen partial
pressure was discussed. The Mg contents in SrTiO3 were taken as 10mol%(sample 1), 20mol%(sample 2), 30mol%(sample 3), 40mol%(sample 4) and 50mol%(sample 5), respectively. All samples were
measured in the temperature range 20～900℃ and PO2 region from 3.8×10-4 to 1.2×10-1 atm. The results show that all samples
exhibit p-type semiconduction. The factor m from R∝ PO2-1/m is dependent on temperature and Mg content in SrTiO3. The obtained results
can be appropriately explained according to the X-ray diffraction patterns and the theory of defect chemistry.
参考文献
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