Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films

材料科学技术（英文）, 2009, 25(5): 691-694.

^1, , ^2, , ^3, , ^4, , ^5,

1.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

2.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

3.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

4.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

5.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

基金项目: Innovation Program of Shanghai Municipal Education Commission(08YZ04) 国家自然科学基金(60877017) 教育部长江学者和创新团队发展计划(IRT0739) Shanghai Leading Academic Disciplines(S30107)

Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films

Jian Huang ^1, , Linjun Wang ^2, , Run Xu ^3, , Weimin Shi ^4, , Yiben Xia ^5,

1.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

2.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

3.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

4.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

5.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

Keywords： Freestanding diamond

Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency (RF) reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, semiconductor characterization system and atomic force microscopy (AFM) respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.

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Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films

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