利用原子力显微镜(AFM)、X射线光电子能谱(XPS)和俄歇电子能谱(AES)分别研究了InAs单晶抛光片的表面形貌和化学构成.结果表明:机械化学抛光工艺条件和清洗腐蚀过程对InAs单晶抛光片表面的化学组分构成和表面粗糙度有很大的影响.通常情况下,InAs单晶抛光片的表面氧化层中含有In2O3、As2O5、As2O3及元素As,而随着As的挥发,使抛光片表面化学计量比明显富铟.通过适当的化学处理控制其表面的化学组分,减小了表面粗糙度,从而获得材料外延生长所要求的开盒即用InAs单晶衬底.
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