用X射线衍射仪和透射电子显微镜研究了氧化态SiC颗粒表面SiO2氧化层与铝基体复合前后的结构.试验结果表明，1111℃下SiC颗粒表面生成的SiO2层为晶态，与铝基体复合后在电子束的辐照下将转变为非晶态对SiO2层的非晶转变机制作了初步的探讨。
The structures of SiO2 surface layer on the oxidized silicon carbide particles before and after compositing with aluminum matrix were studied by XRD and TEM. It is shown that the SiO, layer is crystalline when silicon carbide particles are oxidized at 1100℃ in air. It will be amorphized under the irradiation of high energy electron beam after being composited with aluminum matrix. The amorphization mechanism of the SiO2 layer was also discussed.
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