本文采用化学气相输运(CVT)法,由Zn(5N)和Se(5N)一步直接生长了片状ZnSe单晶,并对其结构特性和光电性能进行分析.研究表明,生长出的ZnSe单晶仅显露(111)面,红外透过率约为40％ ～42％,具有较高的结晶质量.该ZnSe单晶可与In电极形成良好的欧姆接触,其体电阻率约为7.3 ×l09 Ω·cm.
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