欢迎登录材料期刊网

材料期刊网

高级检索

本文用PECVD法在石英玻璃上沉积非晶硅薄膜,然后用快速光退火和传统电阻炉退火方法晶化生长多晶硅薄膜,用拉曼光谱仪、XRD和场发射扫描电镜观察分析薄膜,发现在制备的多晶硅薄膜表面存在结晶团现象,并对这一现象的晶化机理进行了分析.

参考文献

[1] Matsuda A.;Takai M.;Nishimoto T.;Kondo M. .Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2003(1/4):3-26.
[2] Dewarrat R.;Robertson J. .Surface diffusion of SiH3 radicals and growth mechanism of a-Si : H and microcrystalline Si[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):11-15.
[3] Kondo M.;Saito K.;Nishimiya T.;Matsuda A.;Ohe T. .Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,1998(Pt.B):890-895.
[4] Singh R.;Poole KF.;Fakhruddin M. .Rapid photothermal processing as a semiconductor manufacturing technology for the 21st century[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/4):198-203.
[5] 马康,王海燕,吴芳,卢景霄,郜小勇,陈永生.PECVD低温制备微晶硅薄膜的研究[J].人工晶体学报,2008(01):97-101.
[6] 焦栋茂,王新征,李洪涛,郭烈萍,蒋百灵.退火时间对铝诱导非晶硅薄膜晶化过程的影响[J].人工晶体学报,2011(02):370-373,378.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%