介绍了化学液相淀积法制备氧化物薄膜的工艺过程及其在集成电路生产中的应用,并报道了一些最新研究成果.
参考文献
[1] | KAHNG D;Atalla M M.in IRE Device Research Conference[C].Pittsburg,1960 |
[2] | Nagayama H;Honda H et al.[J].Journal of the Electrochemical Society,1988,135:2013. |
[3] | Wang X;Yu Y et al.[J].Thin Solid Films,2000,371:148. |
[4] | Yeh C;Lin S et al.[J].IEEE Transactions on Electron Devices,1995,16:316. |
[5] | Awazu K;Kawazoe H et al.[J].Journal of Non-Crystalline Solids,1992,151:102. |
[6] | Huang CJ.;Huang SP.;Chen JR. .Silicon dioxide passivation of gallium arsenide by liquid phase deposition[J].Materials Chemistry and Physics,2001(1):78-83. |
[7] | Houng M P;Wang Y H et al.[J].Solid-State Electronics,2000,44:1917. |
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