材料期刊网

利用扫描电镜、X射线衍射仪和氧化称重实验对铜表面氧化速率进行研究,分析了不同组织、晶粒和温度对铜氧化性能的影响。结果表明：铜的组织结构是影响其氧化性能的主要因素,非密排的（100）晶面上界面能高、晶面原子堆垛相对疏松和原子尺度上粗糙,且氧化膜生长连续,氧化速率高于密排的（111）晶面;温度升高,铜表面的内能增大,铜原子较易成为活化原子与氧气发生反应,同时增大了铜原子在氧化膜中的扩散速率,加速了铜的氧化;铜试样经过等径角挤压（ECAP）后,（111）晶面铜表面的面积增大,氧化速率降低,晶界不是影响铜氧化速率的主要因素,能量较小的晶面原子所占的面积增大,铜的氧化速率减小。

Oxidation rate of copper was studied by scanning electron-microscopy（SEM）,X-ray diffraction（XRD） and oxidation weight gain experiment,and the effects of different structure,grain size of copper and temperature on oxidation rate were analyzed.The results show that the structure is the main factor to oxidation rate for copper,the interfacial energy of non-dense crystal plane（100） is high,in which atomic packing is relatively loose and the surface is rough in atomic-scales,and the oxidation film forms continuously on（100） plane with higher oxidation rate compared with that of close-packed plane（111）.When temperature increases,the internal energy of copper surface increases,and copper atomics are activated to react with oxygen atoms.The diffusion rate of copper atomics in oxidation film increases and the oxidation rate is accelerate with increase of temperature.The copper sample after treated by equal-channel angular pressing（ECAP）,the crystal plane（111） increases,grain size decreases and the oxidation rate decreases.It is argued that the grain boundary is not the main factor to the oxidation rate of copper,and the area of low energy crystal plane（111） increases leading the decrease of copper oxidation rate.