采用Sol－Gel工艺制备SiO2－TiO2复合薄膜，研究在不同温度下薄膜对HF缓冲溶液的刻蚀能力．薄膜经800℃热处理的刻蚀速率是200℃热处理的1／1000倍，利用这种差异，在薄膜上用激光进行致密化处理，从而形成所需的图形．由XRD和FT－IR光谱分析对造成这种刻蚀能力差异的原因进行了解释、讨论．显微Raman光谱揭示出薄膜经激光处理后，其致密化区域具有不同的晶化特征．说明激光光束的能量分布对其扫描区域的析晶分布有一定的对应关系．
Titania-silica thin films were prepared by a Sol-gel method. The etched ability of the thin films in dilute HF solution was studied. The
film heat-treated at 800℃, reduced etch rate by a factor of almost 1000 compared with that of the film heat-treated at 200℃.
The large difference between the etch rates of densified and undensified films can be used to produce channel waveguide structures by laser scanning on the films. The difference
of the etch rates can be explained by XRD and FT-IR spectrum, and micro Raman spectrum reveals that the crystallization in the region of
laser scanning has a normal distribution.
参考文献
| [1] | |
| [2] | Fardad M A, Yeatman E M, Dawnay E J C, et al. Journal of Non-crystalline Solids, 1995, 183: 260--267 2 Suny-Soon Park, John Douglas Mackenzie. J. Am. Ceram. Soc., 1995, 78 (10): 2267--2272 3 Taylor D J, Dent D Z. J. Mater. Res., 1996, 11 (8): 1870--1873 4 Taylor D J, Fabes B D. Journal of Non-crystalline Solids, 1992, 147\& |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%