采用溶胶-凝胶法制备了Sr2SiO4:Bi3+发光材料.X射线衍射谱显示其为纯相的Sr2SiO4晶体.测量了Sr2SiO4∶ Bi3+材料的激发与发射光谱,结果显示,材料的发射光谱为一单峰宽带,主峰位于441nm处;监测441nm发射峰,所得材料的激发光谱为一主峰位于376nm处的单峰宽带.研究了Bi3+掺杂浓度对Sr2SiO4∶ Bi3+材料发射光谱的影响,结果显示,随Bi3+掺杂浓度的增大,Sr2SiO4∶ Bi3+材料的发射光谱峰值强度表现出先增大后减小的趋势,在Bi3+掺杂物质的量浓度为3%时,可获得最大的峰值强度.加入电荷补偿剂Li+、Na+和K+,均提高了Sr2SiO4∶ Bi3+材料发射光谱峰值强度,其中以加入Li+的情况最明显.
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