研究了一种可抗高温强碱溶液腐蚀的氮化硅薄膜的等离子增强化学气相淀积(PECVD)生长工艺.通过X射线光电子能谱(XPS)、椭圆偏振仪、湿法腐蚀等手段分析了所生长薄膜的元素含量、折射率、抗腐蚀特性等性质随淀积工艺条件的改变所产生的变化.制备出的氮化硅薄膜可在高温强碱溶液(70℃、33.3% KOH溶液)中支撑12h而无明显变化,并实现自支撑全镂空薄膜.
参考文献
| [1] | Kim D H;Oh K S;Park S .[J].Journal of Mechanical Science and Technology,2009,23:1537. |
| [2] | Liu C et al.[J].IEEE/ASME Journal of Microelectromechanical Systems (JMEMS),1999,8(01):90-99. |
| [3] | Lim S H;Horowitz R;Majumdar A .[J].Journal of Micromechanics and Microengineering,2006,16:1259. |
| [4] | Datskos P G;Lavrik N V;Rajic S .[J].Review of Scientific Instruments Volume,2007,4:1136. |
| [5] | 徐方迁,徐联,何世堂.T形结构在位测量薄膜中残余张应力的理论研究[J].半导体学报,2004(05):597-600. |
| [6] | 吴昊;孟永钢;苏才钧 等.[J].Journal of Harbin Institute of Technology,2007,38(04):593-594. |
| [7] | 吴昊,孟永钢,苏才钧,郭占社,温诗铸.多晶硅薄膜残余应力显微拉曼谱实验分析[J].机械强度,2007(02):233-236. |
| [8] | Molinari M;Rinnert H;Vergnat M .[J].Journal of Physics D:Applied Physics,2008,41:175410. |
| [9] | Rebib F;Tomasella E;Dubois M et al.[J].Thin Solid Films,2007,515:3480-3487. |
| [10] | 王玉林.低应力PECVD氮化硅薄膜工艺探讨[J].固体电子学研究与进展,1999(04):448. |
| [11] | Musson L C;Ho P;Plimpton S J et al.[J].Microsystem Technologies,2005,12(137-142):138-140. |
| [12] | 陈大鹏,叶甜春,谢常青,李兵,赵玲莉,韩敬东,胥兴才.LPCVD制备纳米硅镶嵌结构氮化硅膜及其内应力[J].半导体学报,2001(12):1529-1533. |
| [13] | Chou B.C.S.;Jin-Shown Shie .Fabrication of low-stress dielectric thin-film for microsensor applications[J].IEEE Electron Device Letters,1997(12):599-601. |
| [14] | Tuantranont A;Liew Li-Anne;Bright V M et al.[J].Sensors and Actuators A:Physical,2001,89(124-134):125-126. |
| [15] | Soumik Ghosh;Magdy Bayoumi .On Integrated CMOS-MEMS System-on-Chip.0-7803-8935-2/05/$20.00 [R].IEEE,2005. |
| [16] | Takao H;Ichikawa T;Nakata T et al.Post-cmos Integration Technology of Thick-film Soimems Devices Using Micro Bridge Interconnections.978-1-4244-1793-3/08/$25.00 [R].IEEE,2008. |
| [17] | Cho S M;Ko S C;Ha S C et al.Monolithic Electronic Nose System Fabricated by Post CMOS Micromachining.0-7803-9056-3/05/$20.00 [R].IEEE,2005. |
| [18] | 余京松,马青松,葛曼珍,杨辉,江仲华.氮化硅薄膜的制备技术[J].中国陶瓷工业,1999(01):20-22. |
| [19] | 李新贝,张方辉,牟强.等离子增强型化学气相沉积条件对氮化硅薄膜性能的影响[J].材料保护,2006(07):12-16. |
| [20] | Sundaram K B;Sah R E;Baumann H et al.[J].Microelectronic Engineering,2003,70(109-114):110-113. |
| [21] | Ponce-Alcaintara S;del Caniizo C;Hofstetter J et al.[J].IEEE,2007,5:34-35. |
| [22] | Moon S;Kim K;Yo' I.N2 Plasma Treatment Effects in Silicon Nitride Film Formation for Silicon Surface Passivation[A].Osokn,2003:102-103. |
| [23] | Kim D S;Yoon S G;Jang G E et al.[J].Journal of Electroceramics,2006,17:316-317. |
| [24] | Karunagaran B;Chung S J;Velumani S et al.[J].Materials Chemistry and Physics,2007,106:131. |
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