In this paper we put forward a new concept about effective trapping center concentration NeT which is decreasing with the trapped charge Q corresponding to index movement, based on that, we discuss the I-V and temperature characteristics of polysilicon resistors. The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor, and also for poly-silicon film resistors.The final results agree well with the theoretical current-voltage characteristics.
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