本文采用溶胶-凝胶（Sol-Gel）过程和旋涂技术,通过高温烧结,得到了Zn-Sn-O系统的薄膜。结合干凝胶的差示扫描热分析（TG-DSC）和薄膜的X射线衍射分析（XRD）,研究了干凝胶在烧结过程中发生的反应。通过控制溶胶的组成和薄膜烧结温度,得到了较纯净的Zn2SnO4晶相薄膜和ZnSnO3晶相薄膜。ZnSnO3晶体薄膜的电阻率显著低于Zn2SnO4晶体薄膜;N2气氛热处理后,ZnSnO3薄膜的电阻率升高而Zn2SnO4薄膜的电阻率大幅降低;当[Zn]/[Zn＋Sn]=50.3at%时,薄膜的晶相仍为ZnSnO3,其电阻率较[Zn]/[Zn＋Sn]=50.0at%的薄膜降低,约为8.0×102Ω.cm-1。通过上述两种晶相薄膜的X射线光电子能谱分析（XPS）,探讨了这两种晶体不同的导电机理：Zn2SnO4晶体通过其中的氧空位导电,而ZnSnO3晶体则以间隙阳离子导电。紫外-可见光透过率（UV-Vis）分析表明：Zn2SnO4和ZnSnO3晶体薄膜在400~900nm的可见光波段的透过率可达80%以上。
The Zn-Sn-O system thin films were prepared by sol-gel process and spin coating technique on silica glasses and then sintered.The reaction of dry gel during sintering was characterized by themogravimetry-differential scanning calorimetry（TG-DSC） and X-ray diffractometry（XRD）.Relatively pure Zn2SnO4 crystalline films and ZnSnO3 crystalline films were gained by controlling the content of components in the sol and the sintering temperature.The resistivity measurements suggest that ZnSnO3 crystal has a lower resistivity than Zn2SnO4.The resistivity of ZnSnO3 film increases after the treatment in N2 while the Zn2SnO4 film decreases sharply.For ZnSnO3 films,a lower resistivity（about 8.0×102Ω·cm-1） is obtained when / is equal to 50.3at%.The X-ray photoelectron spectroscopy（XPS） results show that the oxygen vacancies in Zn2SnO4 lattice were benefit for a lower resistivity while the interstitial cations in ZnSnO3 lattice might be good for resistivity decreasing.The transmittance of both Zn2SnO4 and ZnSnO3 films is over 80% in the range of 400 ~ 900nm.
参考文献
| [1] | High mobility transparent conducting oxides for thin film solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(7):1839. |
| [2] | 黄树来,马瑾,刘晓梅,马洪磊,孙征,张德恒.ZnO-SnO2透明导电膜的低温制备及性质[J].半导体学报,2004(01):56-59. |
| [3] | Hoel C A;Mason T O;Gaillard J F et al.Transparentconducting oxides in the ZnO-In2O3-SnO2system[J].Chemistry of Materials,2010,22:3569-3579. |
| [4] | Kawazoe H;Ueda K .Transparent conducting Oxides Based onthe Spine Structure[J].Journal of the American Ceramic Society,1999,82(12):3330-3336. |
| [5] | Nasr B;Dasgupta S;Wang D et al.Electrical resistivity ofnanocrystalline Al-doped zinc oxide films as a function of Alconnent and the degree of its segregation at the grain boundaries[J].Journal of Applied Physics,2010,108:103721-1-103721-6. |
| [6] | Tadatsugu Minami;Toshihiro Miyata;Takashi Yamamoto .Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering[J].Surface & Coatings Technology,1998(1/3):583-587. |
| [7] | Chien-Yie Tsay;Hua-Chi Cheng;Yen-Ting Tung;Wei-Hsing Tuan;Chung-Kwei Lin .Effect Of Sn-doped On Microstructural And Optical Properties Of Zno Thinfilms Deposited By Sol-gel Method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(3):1032-1036. |
| [8] | Ilican S;Caglar M;Caglar Y .Sn doping effects on the electro-optical properties of sol gel derived transparent ZnO films[J].Application Surface Sinence,2010,256:7204-7210. |
| [9] | A.R. Babar;S.S. Shinde;A.V. Moholkar .Sensing properties of sprayed antimony doped tin oxide thin films: Solution molarity[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2011(6):3108-3115. |
| [10] | Moholkar A V;Pawar S M;Rajpure K Y et al.Effect offluorine doping on highly transparent conductive spray depositednanocrystalline tin oxide thin films[J].Application Surface Sinence,2009,255:9358-9364. |
| [11] | Yasushi Sato;Jun Kiyohara;Akira Hasegawa;Takeshi Hattori;Masaya Ishida;Noriaki Hamada;Nobuto Oka;Yuzo Shigesato .Study on inverse spinel zinc stannate, Zn_2SnO_4, as transparent conductive films deposited by rf magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(4):1304-1308. |
| [12] | Kurz, A;Aegerter, MA .Novel transparent conducting sol-gel oxide coatings[J].Thin Solid Films,2008(14):4513-4518. |
| [13] | Kurz A;Brakecha K;Puetz J;Aegerter MA .Strategies for novel transparent conducting sol-gel oxide coatings[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):212-218. |
| [14] | J.H. Ko;I.H. Kim;D. Kim;K.S. Lee;T.S. Lee;B. Cheong;W.M. Kim .Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(18):7398-7403. |
| [15] | Vipin Kumar Jain;Praveen Kumar;Mahesh Kumar .Study of post annealing influence on structural, chemical and electrical properties of ZTO thin films[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2011(8):3541-3546. |
| [16] | Tadatsugu Minami .New n-Type Transparent Conducting Oxides[J].MRS bulletin,2000(8):38-44. |
| [17] | Vipin Kumar Jain;Praveen Kumar;Deepika Bhandari;Y.K. Vijay .Growth and characterization of transparent conducting nanostructured zinc indium oxide thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(3):1082-1086. |
| [18] | Fan J C C;Goodenough J B .X-ray photoemission spectroscopystudies of Sn-doped indium-oxides films[J].Journal of Applied Physics,1977,48:3524-3531. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%