用脉冲激光沉积法(PLD)先在600℃的Si(111)衬底上沉积ZnO薄膜,然后用磁控溅射法再沉积GaN薄膜.直接沉积得到的GaN薄膜是非晶结构,将样品在氨气氛固中在850、900、950℃下退火15min得到结晶的GaN薄膜.用X射线衍射(XRD)、傅立叶红外吸收谱(FTIR)、光致发光谱(PL)和扫描电子显微镜(SEM)研究了ZnO缓冲层对GaN薄膜的结晶和形貌的影响.
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