采用直流磁控溅射的方法在Si(100)衬底上制备了Mg2Si外延半导体薄膜.通过XRD和FESEM对Mg2Si薄膜的晶体结构和表面形貌进行了表征,分析了溅射功率对Mg2Si薄膜制备的影响,得到了Mg2Si薄膜在不同溅射功率下的外延生长特性.结果表明,在Si(100)衬底上,Mg2Si薄膜具有(220)的择优生长特性,并且在50～80W的溅射功率范围内,随着溅射功率的增加,Mg2Si外延薄膜的衍射峰强度逐渐增强.
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