采用脉冲激光沉积(PLD)法在钠钙玻璃衬底上制备了CuGaSe2∶Ge薄膜.采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)对CuGaSe2∶Ge薄膜的晶体结构和表面形貌进行了表征,采用紫外-可见分光光度计分析了CuGaSe2∶Ge薄膜的光吸收、反射和透射特性.结果表明,在CuGaSe2中掺Ⅳ族元素Ge,价带到中间带和中间带到导带的光子吸收能量分别为0.89 eV和0.71 eV,禁带宽度为1.60 eV,能够形成中间带.
参考文献
| [1] | 刘春娜.国外铜铟镓硒太阳电池研发现状[J].电源技术,2013(12):2095-2096. |
| [2] | Luque A;Marti A .Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels[J].Physical review letters,1997(26):5014-5017. |
| [3] | I. Aguilera;P. Palacios;P. Wahnon .Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(20):7055-7059. |
| [4] | P. Palacios;I. Aguilera;P. Wahnon .Ab-initio vibrational properties of transition metal chalcopyrite alloys determined as high-efficiency intermediate-band photovoltaic materials[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(20):7070-7074. |
| [5] | Electronic structure and optical properties of CuGaS_2 and CuInS_2 solar cell materials[J].Solar Energy,2010(8):1481-1489. |
| [6] | Marti A;Marron DF;Luque A .Evaluation of the efficiency potential of intermediate band solar cells based on thin-film chalcopyrite materials[J].Journal of Applied Physics,2008(7 Pt.1):73706-1-73706-6-0. |
| [7] | G.P. Gorgut;A.O. Fedorchuk;I.V. Kityk;V.P. Sachanyuk;I.D. Olekseyuk;O.V. Parasyuk .Synthesis and structural properties of CuInGeS_4[J].Journal of Crystal Growth,2011(1):212-216. |
| [8] | Raquel Lucena;Irene Aguilera;Pablo Palacios .Synthesis and Spectral Properties of Nanocrystalline V-Substituted In2S3,a Novel Material for More Efficient Use of Solar Radiation[J].Chemistry of Materials: A Publication of the American Chemistry Society,2008(16):5125-5127. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%