高分子材料科学与工程, 2010, 26(7): 170-174.
高分子材料在选择性激光烧结中的应用——(Ⅰ)材料研究的进展
闫春泽 1, , 史玉升 2, , 杨劲松 3, , 刘锦辉 4, {"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"为确定某种新型刻蚀机最优的晶圆与喷淋头间距(Gap),通过CFD仿真分析气体在不同Gap腔室内的物质输运分布,并结合乙醇环境下HF酸刻蚀SiO2工艺的物理化学过程,建立了刻蚀速率估算公式,以此分析了不同Gap腔室的刻蚀速率及刻蚀均匀性,最终获得了具有最佳刻蚀效果的腔室结构.研究分析表明:Gap较小时晶圆中心刻蚀速率偏高,Gap较大时晶圆边缘刻蚀速率偏高;平均刻蚀速率随着Gap的增大逐渐降低,而刻蚀不均匀度随Gap增大先减小后增大,在Gap取值70 mm时刻蚀均匀性最佳且刻蚀速率较高.","authors":[{"authorName":"王伟","id":"5d01da8f-4292-4f49-b79d-316d25f8c835","originalAuthorName":"王伟"},{"authorName":"向东","id":"ddcb9b8f-41ec-4109-8e92-0034be9f2595","originalAuthorName":"向东"},{"authorName":"杨为","id":"fd8f79ef-9923-47c0-81c7-13c5a5d51ee9","originalAuthorName":"杨为"},{"authorName":"夏焕雄","id":"d0ff8e57-69d9-45cb-b658-fb1f65e1bb36","originalAuthorName":"夏焕雄"},{"authorName":"张瀚","id":"5a485744-d16f-4308-956f-d9af418c61f9","originalAuthorName":"张瀚"}],"doi":"","fpage":"1110","id":"49bbcdc7-8352-421b-a123-57e6c57dd249","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"60856b16-5775-4617-8065-3ee4a4e35f8d","keyword":"刻蚀腔室","originalKeyword":"刻蚀腔室"},{"id":"52329eed-1a03-4f5f-a549-ae20d775ddc5","keyword":"流场仿真","originalKeyword":"流场仿真"},{"id":"7b270bce-cf77-4ef1-a90e-ae0c53c9ee20","keyword":"均匀性","originalKeyword":"均匀性"},{"id":"b48e71cb-baff-4082-bc3f-c05993573c58","keyword":"刻蚀速率","originalKeyword":"刻蚀速率"}],"language":"zh","publisherId":"rgjtxb98201405016","title":"湿法刻蚀腔室结构数值优化","volume":"43","year":"2014"},{"abstractinfo":"以某18英寸湿法刻蚀机腔室为研究对象,建立了流-热耦合的数值分析模型,研究了刻蚀过程中工艺气体在圆筒式腔室内流速、压强、温度的分布规律,结合HF酸在乙醇环境下刻蚀SiO2的工艺原理,提出了由耗散系数、物质转换系数、物质量通量、品格结构等表征的刻蚀速率及刻蚀不均匀性评价方法,得到了腔室关键结构及主要工艺的参数对刻蚀性能的影响规律.","authors":[{"authorName":"杨为","id":"d1b8d994-0189-4d83-afdd-97e4818a2257","originalAuthorName":"杨为"},{"authorName":"向东","id":"796faca5-c21a-48f2-9d25-4a2b6d7c30f1","originalAuthorName":"向东"},{"authorName":"杜飞","id":"dd80748a-500b-47b3-a034-045901e2152e","originalAuthorName":"杜飞"},{"authorName":"王伟","id":"1b806c5e-b75a-4d63-98e5-b8d1e6748534","originalAuthorName":"王伟"},{"authorName":"田浩","id":"f57d5588-90f8-4c51-9e4e-c6492c1f158f","originalAuthorName":"田浩"}],"doi":"","fpage":"1056","id":"8c6439a5-f364-464d-bd35-216fc32acc31","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"bdf2dfc0-5407-4dfe-9aa2-6a39a392359b","keyword":"刻蚀机","originalKeyword":"刻蚀机"},{"id":"52a26e7e-6b87-4387-9e24-b6cd426274bf","keyword":"腔室结构","originalKeyword":"腔室结构"},{"id":"000febc7-a094-433c-9d4e-dcff7a2dc3d8","keyword":"流-热耦合模型","originalKeyword":"流-热耦合模型"},{"id":"853d92c3-5fc2-44bf-ab77-982f2817a975","keyword":"刻蚀均匀性","originalKeyword":"刻蚀均匀性"},{"id":"9f5dee7a-b74f-40f0-a0c0-fd5091f15f3a","keyword":"刻蚀速率","originalKeyword":"刻蚀速率"}],"language":"zh","publisherId":"rgjtxb98201504036","title":"湿法刻蚀机腔室关键结构及主要工艺参数对刻蚀性能的影响因素研究","volume":"44","year":"2015"},{"abstractinfo":"采用分子束外延方法在 GaSb 衬底上生长InAs/GaSb 超晶格红外薄膜材料,为获得台面结构,采用电感耦合等离子体(ICP)刻蚀技术和 Cl2/Ar 刻蚀气体,分别研究了不同刻蚀时间、不同气体比例及不同功率对 GaSb、InAs 及 InAs/GaSb 超晶格刻蚀速率和刻蚀形貌的影响。结果表明,由于刻蚀产物 InClx 的低挥发性阻挡了 Cl2的刻蚀,InAs 的刻蚀速率低于GaSb；Cl2比例在20％~40％时,刻蚀表面粗糙度最小,明显低于湿法腐蚀造成的表面损伤,有助于形成良好的欧姆接触和减小器件的表面漏电流。","authors":[{"authorName":"郭杰","id":"6727fe71-df0a-4986-8eea-0955ce3c255f","originalAuthorName":"郭杰"},{"authorName":"郝瑞亭","id":"b9ecb4ba-0614-4136-88e3-8cbf25f0c10e","originalAuthorName":"郝瑞亭"},{"authorName":"赵前润","id":"fe35a15e-9a06-49d5-bd52-d5b98cd2408b","originalAuthorName":"赵前润"},{"authorName":"满石清","id":"dd47db31-019a-4b22-b069-31842adc26a8","originalAuthorName":"满石清"}],"doi":"10.3969/j.issn.1001-9731.2014.01.027","fpage":"1122","id":"44514a36-954d-4505-a0d9-ce7b3b5b19c3","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"80117094-557f-4435-8ef9-1f1ae3d28fd5","keyword":"InAs/GaSb","originalKeyword":"InAs/GaSb"},{"id":"bd178a55-fb7b-4d47-922f-27852f8f5fc2","keyword":"超晶格","originalKeyword":"超晶格"},{"id":"959c51c8-38fe-409b-ab05-cdf2d2557961","keyword":"ICP 刻蚀","originalKeyword":"ICP 刻蚀"},{"id":"e06682b6-f847-4b94-bdac-aa03885b3ec9","keyword":"刻蚀速率","originalKeyword":"刻蚀速率"},{"id":"e0f3c712-2e85-47c1-865a-2689dbd60241","keyword":"表面形貌","originalKeyword":"表面形貌"}],"language":"zh","publisherId":"gncl201401027","title":"InAs/GaSb 超晶格红外探测器台面的 ICP 刻蚀研究","volume":"","year":"2014"},{"abstractinfo":"采用Cl2/Ar感应耦合等离子体对InP进行了刻蚀.讨论了直流自偏压、ICP功率、气体总流量和气体组分等因素对刻蚀速率和粗糙度的影响.结果表明Cl2/Ar气体组分是决定刻蚀效果的重要因素.当Cl2含量为30%左右时,刻蚀中的物理溅射与化学反应过程趋于平衡,刻蚀速率处于峰值区,同时刻蚀粗糙度也可达到最小值.SEM照片显示刻蚀表面光洁,侧壁陡直.","authors":[{"authorName":"朱海波","id":"137aa945-522c-41c5-9f20-1e887622c498","originalAuthorName":"朱海波"},{"authorName":"李晓良","id":"cddd2b94-75b6-455a-8d51-637bba064cb8","originalAuthorName":"李晓良"}],"doi":"10.3969/j.issn.1007-4252.2005.03.025","fpage":"377","id":"bf672fe5-f2a2-4c6e-9862-42b3e1dc309b","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"affef9c0-7c9d-4781-bad7-d28d5c2ccbb7","keyword":"干法刻蚀","originalKeyword":"干法刻蚀"},{"id":"f41cc89c-3451-42a5-98e6-2950d270b3ff","keyword":"感应耦合等离子体","originalKeyword":"感应耦合等离子体"},{"id":"d7f5c3d2-b657-4624-9e69-1bc40900d610","keyword":"InP","originalKeyword":"InP"},{"id":"fa5d19de-a153-4c8f-b5a3-d69f57175d52","keyword":"刻蚀速率","originalKeyword":"刻蚀速率"},{"id":"69a87952-5fc7-4487-ac40-bcecc0d1d516","keyword":"粗糙度","originalKeyword":"粗糙度"}],"language":"zh","publisherId":"gnclyqjxb200503025","title":"Cl2/Ar感应耦合等离子体刻蚀InP工艺研究","volume":"11","year":"2005"},{"abstractinfo":"使用CF4/Ar高密度感应耦合等离子体(ICP)对磁控溅射法制得的铌酸锌铋(BZN)薄膜进行了干法刻蚀工艺研究.分析了BZN薄膜的刻蚀速率随工艺气体流量比、总流量和工作压强的改变而出现极大值的原因,展示了BZN薄膜的刻蚀速率随ICP功率的增大而线性增加的趋势.研究结果表明,使用CF4/Ar感应耦合等离子体对BZN薄膜进行刻蚀的机理为物理辅助的化学反应刻蚀.BZN薄膜的最佳刻蚀工艺参数为CF4/Ar流量比3/2、总流量25sccm、工作压强1.33Pa、ICP功率800W,使用此参数对BZN薄膜进行刻蚀,最大刻蚀速率为26nm/min,刻蚀后薄膜边缘齐整、表面光滑、形状完整.","authors":[{"authorName":"王刚","id":"1bbb8dfd-76ba-4073-a48b-21ec7d186784","originalAuthorName":"王刚"},{"authorName":"李威","id":"89048d65-4403-4ad9-8e1d-467e8be0a0fc","originalAuthorName":"李威"},{"authorName":"李平","id":"7e8ae690-e08f-41a5-bcce-cfcd01cf4ee7","originalAuthorName":"李平"},{"authorName":"李祖雄","id":"dab2ee18-1aec-4598-8814-0b201a15d8c2","originalAuthorName":"李祖雄"},{"authorName":"范雪","id":"1702e9ec-acd7-4057-8f16-d7bb05db3a82","originalAuthorName":"范雪"},{"authorName":"姜晶","id":"91935311-85d6-45bb-90e0-aa87b46ac36d","originalAuthorName":"姜晶"}],"doi":"","fpage":"1","id":"80e37e4f-6ddf-4c1e-91b2-dc33ff90227a","issue":"18","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"5bfcf5cb-2d2a-4f9f-815f-5d568b1da492","keyword":"BZN薄膜","originalKeyword":"BZN薄膜"},{"id":"db329605-f093-494d-8d90-9ca64678406e","keyword":"感应耦合等离子体","originalKeyword":"感应耦合等离子体"},{"id":"888f3d35-bc4b-40be-84d3-ec27adb1b93e","keyword":"干法刻蚀","originalKeyword":"干法刻蚀"},{"id":"86ebdf5d-9665-4586-af5a-f8b2bf8b3f6e","keyword":"刻蚀速率","originalKeyword":"刻蚀速率"},{"id":"a4cd11b5-5b21-45e5-a351-71a9f7cf66b7","keyword":"表面形貌","originalKeyword":"表面形貌"}],"language":"zh","publisherId":"cldb201218001","title":"基于CF4/Ar高密度感应耦合等离子体的BZN薄膜的刻蚀工艺研究","volume":"26","year":"2012"},{"abstractinfo":"对多晶硅薄膜晶体管器件工艺中的反应性离子刻蚀技术进行研究,给出了Ta、 p-Si等多晶硅薄膜晶体管器件中常见薄膜的刻蚀速率,通过工艺参数的优化,使薄膜间的选择比在2～20可选择;并通过气体掺杂,实现了SiNx对p-Si的选择比从-1到2的反转.","authors":[{"authorName":"王大海","id":"debb15a3-c37e-4344-93fa-1531bdf3d291","originalAuthorName":"王大海"},{"authorName":"李轶华","id":"ef1e6749-304d-4935-be4a-ed75bdf40ae3","originalAuthorName":"李轶华"},{"authorName":"孙艳","id":"187df2a8-91c0-41e4-991b-656c4b636e42","originalAuthorName":"孙艳"},{"authorName":"吴渊","id":"320dda90-97e9-4555-aa45-364605ee79a0","originalAuthorName":"吴渊"},{"authorName":"陈国军","id":"bbd2f00e-b10e-46bd-aaa4-c78f3a0fd3f2","originalAuthorName":"陈国军"},{"authorName":"王国柱","id":"2821cf5d-521a-4893-89c1-e594512d748f","originalAuthorName":"王国柱"},{"authorName":"荆海","id":"46ba376b-d870-4635-b6ca-9127e0a8da08","originalAuthorName":"荆海"},{"authorName":"万春明","id":"71c0e0df-ef2b-41f7-9caa-2ad43e6c8ecf","originalAuthorName":"万春明"}],"doi":"10.3969/j.issn.1007-2780.2002.01.011","fpage":"59","id":"27d561de-7dc8-4655-88c4-7f9943e46637","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"cf9c4554-eeb6-4c27-8971-e97abad6e62f","keyword":"多晶硅薄膜晶体管","originalKeyword":"多晶硅薄膜晶体管"},{"id":"41e97a2f-5f47-4bdc-9d00-62e3726efed9","keyword":"反应性离子刻蚀","originalKeyword":"反应性离子刻蚀"},{"id":"750a5a4a-eab7-4e1a-97fb-3071e8c2a9b9","keyword":"刻蚀速率","originalKeyword":"刻蚀速率"},{"id":"33e82b0d-b30f-4f6e-95c9-df9d8d3ad864","keyword":"选择比","originalKeyword":"选择比"}],"language":"zh","publisherId":"yjyxs200201011","title":"多晶硅薄膜晶体管工艺中的反应性离子刻蚀","volume":"17","year":"2002"},{"abstractinfo":"在CF4/Ar的感应耦合等离子体中,用\"法拉第筒\"式的方法研究了SiO2刻蚀速率与不同离子入射角度之间的关系.在所施加的-20～300V射频偏压范围内,SiO2基片的归一化刻蚀速率(NER)呈现两种情况,当偏压值＜100V时,归一化刻蚀速率的大小与基片倾斜角度θ符合余弦曲线规律;当偏压值＞100V时,θ在15°～60°范围内,归一化刻蚀速率的大小在大于相应的余弦值,θ＞60°时归一化刻蚀速率快速下降,在90°附近SiO2表面出现聚合物沉积.θ＜60°时,SiO2的表面刻蚀主要决定于入射离子与基片表面间的能量转换,转换能量的大小深刻地影响着SiO2的刻蚀速率,同时也影响形成于基片表面的碳氟聚合物的去除速率.","authors":[{"authorName":"孔华","id":"878a01ba-a4fc-479b-a607-c7077d9b43bb","originalAuthorName":"孔华"},{"authorName":"辛煜","id":"a3b2a022-0f7c-4491-901c-ead82c1edaf9","originalAuthorName":"辛煜"},{"authorName":"黄松","id":"53a51e11-b86d-4990-b4db-15c02394ddd1","originalAuthorName":"黄松"},{"authorName":"宁兆元","id":"49934ea0-0c40-49bb-b1c9-0b2e75c97053","originalAuthorName":"宁兆元"}],"doi":"10.3969/j.issn.1007-4252.2004.03.011","fpage":"327","id":"6c09f0c9-121f-4ece-9050-b1bb499929f2","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"81312771-60ea-4188-85a2-2138aaf54143","keyword":"感应耦合等离子体","originalKeyword":"感应耦合等离子体"},{"id":"396f9eae-5eae-4eb4-b730-f59325a633cf","keyword":"归一化刻蚀速率","originalKeyword":"归一化刻蚀速率"},{"id":"75072077-6957-4f35-b006-4e96eef4b325","keyword":"法拉第筒","originalKeyword":"法拉第筒"}],"language":"zh","publisherId":"gnclyqjxb200403011","title":"CF4/Ar等离子体刻蚀中入射角对SiO2刻蚀速率的影响","volume":"10","year":"2004"},{"abstractinfo":"选择刻蚀在GaAs工艺中是非常重要的一步.由于湿法腐蚀存在钻蚀和选择性差,且精度难以控制,因此有必要进行干法刻蚀的研究.虽然采用反应离子刻蚀(RIE)、磁增强反应离子刻蚀(MERIE)可以进行选择刻蚀,但是这两种方法在挖槽时会对器件造成较大损伤,影响器件性能.感应耦合等离子刻蚀(ICP)是一种低损伤、高刻蚀速率高选择比的刻蚀方法,在GaAs器件的制造中有突出的优点.本工作进行了GaAs/AlGaAs的选择刻蚀研究,GaAs/AlGaAs的选择比达到840:1,取得较理想的刻蚀结果.","authors":[{"authorName":"王惟林","id":"ebbfbc37-93c8-4af8-b5be-0e13fc2c66b4","originalAuthorName":"王惟林"},{"authorName":"刘训春","id":"fbee6d62-1121-418c-849f-eacdfe8ab8b3","originalAuthorName":"刘训春"},{"authorName":"魏珂","id":"2a2fa364-1d18-45ef-9670-09422497f643","originalAuthorName":"魏珂"},{"authorName":"郭晓旭","id":"8d7f74ce-9cec-4be4-bc85-53de2d7d56c9","originalAuthorName":"郭晓旭"},{"authorName":"王润梅","id":"381a4216-7ef2-475e-b256-b7bcb68ffe98","originalAuthorName":"王润梅"}],"doi":"10.3969/j.issn.1007-4252.2000.03.011","fpage":"174","id":"b87e0615-0b00-4e71-a083-3affc7c55f53","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"a1340f43-ff89-4e66-a726-a52e414bb6f9","keyword":"GaAs/AlGaAs","originalKeyword":"GaAs/AlGaAs"},{"id":"9b13b7e2-2181-488b-a8ae-9f215554cd4e","keyword":"ICP","originalKeyword":"ICP"},{"id":"90e0c346-fa47-43ad-ad41-56b487a5d01b","keyword":"选择刻蚀","originalKeyword":"选择刻蚀"}],"language":"zh","publisherId":"gnclyqjxb200003011","title":"GaAs的ICP选择刻蚀研究","volume":"6","year":"2000"},{"abstractinfo":"对TFT器件工艺中的反应性离子刻蚀技术进行了研究,给出了TFT器件工艺中常见薄膜刻蚀速率的实验结果,并讨论了掺杂气体(如H2、Ar)对刻蚀速率的影响.","authors":[{"authorName":"柳江虹","id":"7beb6763-3bc7-43ed-b404-25c431b2fc26","originalAuthorName":"柳江虹"},{"authorName":"袁剑峰","id":"aa39a4fa-f178-4bf0-9e92-f33ca6b949af","originalAuthorName":"袁剑峰"},{"authorName":"杨柏梁","id":"b5b564cb-c618-4cbd-ba8a-8d2e59841a0b","originalAuthorName":"杨柏梁"},{"authorName":"梁庆成","id":"0d22e85e-64f9-4d05-aba7-a89486e079b1","originalAuthorName":"梁庆成"}],"doi":"10.3969/j.issn.1007-2780.1999.01.006","fpage":"29","id":"1cf7f0d2-94ea-463d-b72b-53aad4bc724d","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"0b29dbc7-cd91-4674-a45b-b5406008fc07","keyword":"反应性离子刻蚀","originalKeyword":"反应性离子刻蚀"},{"id":"b62ee43b-bfd2-487c-b009-add9e251e6dc","keyword":"选择比","originalKeyword":"选择比"},{"id":"9617875b-0dc2-4c4a-9a6d-0e2a9bacfc04","keyword":"TFT器件","originalKeyword":"TFT器件"}],"language":"zh","publisherId":"yjyxs199901006","title":"TFT工艺中的反应性离子刻蚀","volume":"14","year":"1999"},{"abstractinfo":"采用Cl2/CH4/N2感应耦合等离子体对InP进行了刻蚀.系统地讨论了RF功率、ICP功率、反应腔压力、气体流量等工艺参数对InP材料端面刻蚀的影响.通过优化工艺参数,获得了光滑垂直的InP刻蚀端面,刻蚀速率达到841 nm/min,与SiO2的选择比达到15:1.","authors":[{"authorName":"陈磊","id":"332f2b40-03a7-440f-92ca-0dd12d9346ac","originalAuthorName":"陈磊"},{"authorName":"张靖","id":"96148359-69e7-464c-9cbb-2d02575fb30a","originalAuthorName":"张靖"},{"authorName":"张瑞康","id":"44c19fa5-4be4-4190-9e1d-0943fff3b54f","originalAuthorName":"张瑞康"},{"authorName":"江山","id":"9dbbd2d8-78cd-4a4e-8759-b7fe3738314e","originalAuthorName":"江山"}],"doi":"10.3969/j.issn.1007-4252.2007.03.016","fpage":"276","id":"942facc8-d505-4be7-8e32-b68cda216e88","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"adefcb86-6bfb-4d89-aa75-4a94434bcc10","keyword":"干法刻蚀","originalKeyword":"干法刻蚀"},{"id":"eee7c4b2-b609-4f91-a134-38c697d88736","keyword":"感应耦合等离子体","originalKeyword":"感应耦合等离子体"},{"id":"ac71bcf1-a6cc-48cd-a1d4-9d4e14494a5f","keyword":"InP","originalKeyword":"InP"},{"id":"dc7d0fdc-5572-4f6d-ba88-163ae9148c3f","keyword":"刻蚀端面","originalKeyword":"刻蚀端面"}],"language":"zh","publisherId":"gnclyqjxb200703016","title":"感应耦合等离子刻蚀InP工艺","volume":"13","year":"2007"}],"totalpage":1429,"totalrecord":14290}