使用固相反应法在还原气氛中制备了具有长余辉性能的CaMgSi2O6发光材料.研究了不同的共激发离子(Dy3+和Nd3+)对于材料发光性能的影响.光谱分析表明了这些磷光体在438nm处有一个宽的发射峰,这个发射峰是由Eu2+的4f65d1能级到4f7能级的跃迁所导致的,而Eu2+在透辉石中形成六配位的发光中心.获得的3种磷光体都具有长余辉发光性能.其中共掺杂Eu2+和Dy3+材料比单掺Eu2+和共掺Eu2+和Nd3+的材料具有更好的余辉强度和更长的余辉时间,其原因在于Dy3+在CaMgSi2O6晶格中形成了更深的和更高密度的陷阱.
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