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采用射频磁控溅射工艺,用高纯ZnO粉末制作靶材,在普通玻璃基片上制备高度C轴取向且残余应力低的纳米ZnO薄膜,并分析其退火前后的组织和微结构.结果表明:在试验范围内,溅射态ZnO薄膜的组织都均匀、致密,晶粒尺寸小于50nm,具有高度的C轴取向,但膜内有残余拉应力,混晶取向且结晶性差的ZnO薄膜的残余应力大;提高氧分压有利于薄膜C轴取向生长和提高晶化程度;在500℃保温2h退火,薄膜内残余应力显著降低,晶化程度提高,晶粒尺寸略有增加.

参考文献

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[2] Molarius J.;Kaitila J.;Pensala T.;Ylilammi M. .Piezoelectric ZnO films by r.f. sputtering[J].Journal of Materials Science. Materials in Electronics,2003(5/7):431-435.
[3] 傅竹西,林碧霞,何一平,廖桂红.ZnO薄膜的反射、透射光谱及能带结构测量[J].发光学报,2002(06):559-562.
[4] 薛忠营,张德恒,王卿璞.ZnO薄膜材料的发光谱[J].功能材料,2003(01):17-19.
[5] Han MY.;Jou JH. .DETERMINATION OF THE MECHANICAL PROPERTIES OF RF-MAGNETRON-SPUTTERED ZINC OXIDE THIN FILMS ON SUBSTRATES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1):58-64.
[6] Fang GJ.;Li DJ.;Yao BL. .Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2002(4):363-372.
[7] 王晶,张希清,梅增霞,黄世华,徐征.ZnO薄膜制备及其发光特性研究[J].光电子·激光,2002(11):1116-1119.
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