采用射频磁控溅射工艺,用高纯ZnO粉末制作靶材,在普通玻璃基片上制备高度C轴取向且残余应力低的纳米ZnO薄膜,并分析其退火前后的组织和微结构.结果表明:在试验范围内,溅射态ZnO薄膜的组织都均匀、致密,晶粒尺寸小于50nm,具有高度的C轴取向,但膜内有残余拉应力,混晶取向且结晶性差的ZnO薄膜的残余应力大;提高氧分压有利于薄膜C轴取向生长和提高晶化程度;在500℃保温2h退火,薄膜内残余应力显著降低,晶化程度提高,晶粒尺寸略有增加.
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