注氧隔离法(SIMOX)和体硅智能剥离法(smart-cut)是目前制备绝缘体上的硅(SOI)材料的最重要的两种方法.而离子注入是其中最主要工艺过程.本文简述了等离子体基离子注入(PBII)在制备SOI的两种方法中应用的国内外研究现状.讨论了两种方法中需要考虑的共性问题,包括注入剂量的均匀性、等离子体中离子的选择、单一能量的获得以及避免C、N、O及金属粒子的污染等.并且针对SIMOX和smart-cut各自的工艺特点,分别讨论了不同工艺参数的选择、工艺中出现的主要问题和一些已经得到的解决办法.
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