Plasma-nitriding of tantalum at relatively low temperature

稀有金属（英文版）, 2004, 23(2): 185-188.

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1.National R & D Center for Surface Engineering of China, Shenzhen 518029, China;University of Science and Technology Beijing, Beijing 100083, China

2.University of Science and Technology Beijing, Beijing 100083, China

3.National R & D Center for Surface Engineering of China, Shenzhen 518029, China

4.National R & D Center for Surface Engineering of China, Shenzhen 518029, China

5.National R & D Center for Surface Engineering of China, Shenzhen 518029, China

Plasma-nitriding of tantalum at relatively low temperature

Keywords： surface and interface of materials

The combined quadratic orthogonal regression method of experiment design was employed to explore the effects of process parameters of plasma nitriding of tantalum such as total pressure, temperature and original hydrogen molar fraction on the hardness, roughness and structure of nitriding surfaces. The regression equations of hardness, roughness and structure were given according to the results of regression and statistic analysis. And the diffusion activation energy of nitrogen in tantalum on plasma nitriding conditions was calculated according to the experimental data of hardness of plasma-nitriding of tantalum vs time and temperature. The diffusion activation energy calculated belongs to (155.49 + 10.51)kJ/mol (783-983 K).

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Plasma-nitriding of tantalum at relatively low temperature

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