采用催化裂解有机前驱体方法制备出单晶a-Si3N4纳米带,研究了纳米带的吸收光谱、光致发光(PL)及激发(PLE)光谱.吸收光谱表明约5.0eV禁带宽度的纳米带是间接带半导体吸收.室温下纳米带的PL光谱在1.8eV, 2.3eV和3.0eV处有3个宽峰.PLE光谱显示在能隙中存在多个能级.
single crystalline α-Si3N4 nanobelts synthesized via catalyst-assisted pyrolysis of polymeric precursor were investigated using absorption, photoluminescence (PL) and photoluminescent excitation (PLE). The optical absorption spectrum showed that the nanobelts exhibited indirect absorption behavior with optical band gap of ～5.0eV. Three broad peaks centered at 1.8eV, 2.3eV and 3.0eV were observed from PL spectrum of the nanobelts at room temperature. The PLE spectra suggest the existence of multi-fold energy levels within the gap.
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