采用脉冲激光沉积(PLD)法在Si(111)衬底上制备了Eu3+,Li+共掺杂的ZnO薄膜,分别在450,500,550和600℃条件下进行退火,退火气氛为真空.利用X射线衍射(XRD)仪和荧光分光光度计研究了退火温度对薄膜结构和光致发光(PL)的影响.研究结果表明,Eu3+,Li+共掺杂的ZnO薄膜具有c轴择优取向,Eu3+,Li+没有单独形成结晶的氧化物,均以离子形式掺入ZnO晶格中.PL谱中有较宽的ZnO基质缺陷发光,ZnO基质与稀土Eu3+之间存在能量传递,但没有有效的能量传递.随着退火温度的增加,薄膜发光先增强后减弱,退火温度为550℃时发光最强.当用395 nm的激发光激发样品时,仅观察到稀土Eu3+在594 nm附近的特征发光峰,但发光强度随退火温度变化不明显.
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