Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate

材料科学技术（英文）, 2006, 22(5): 651-654.

^1, , ^2, , ^3, , ^4, , ^5,

1.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

2.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

3.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

4.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

5.State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

基金项目: 国家重点基础研究发展计划(973计划)(TG2000036603) 国家自然科学基金(60336010;90401001) the Student Innovation Program of CAS(1731000500010)

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate

Keywords： Si1-xGex

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction(DCXRD)and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

参考文献

[1]	R Braunstein;A R Moore;F Herman .[J].Physical Review,1958,109:695.
[2]	R People .[J].Physical Review B:Condensed Matter,1985,32:1405.
[3]	J W Matthews;A E Blakeslee .[J].Journal of Crystal Growth,1974,27:118.
[4]	R People;J C Bean .[J].Applied Physics Letters,1985,47:322.
[5]	D D Perovic;B Bahieathan;H Lafontaine;D C Houghton and D W McComb .[J].PHYSICA A,1997,239(11)
[6]	E Kasper;A Schuh;G Bauer;B Holl(a)nder and H Kibbel .[J].Journal of Crystal Growth,1995,157:68.
[7]	L Diehl;S Mentese;E Miiller;D Grützmacher, H Sigg, T Fromherz, J Faist, U Gennser, Y Campidelli, O Kermarrec and D Bensahel .[J].Physica E-Low-Dimensional Systems & Nanostructures,2003,16:315.
[8]	V S Speriosu;T Vreeland .[J].Journal of Applied Physics,1984,56:1591.
[9]	J M Vandenberg;R A Hamm;M B Panish;H Temkin .[J].Journal of Applied Physics,1987,62:1278.
[10]	B Dietrich;E Bugiel;J Klatt;G Lippert, T Morgenstern, H J Osten and P Zaumseil .[J].Journal of Applied Physics,1993,74:3177.
[11]	P M Mooney;F H Dacol;J C Tsang;J O Chu .[J].Applied Physics Letters,1993,62:2069.
[12]	J Olivares;P Martin;A Rodriguez;J Sangrador, J Jiménez and T Rodriguez .[J].Thin Solid Films,2000,358:56.
[13]	T S Perova;R Maurice;R A Moore;K.Lyutovich, C.P.Parry, M.Bauer and E.Kasper .[J].Journal of MATERIALS SCIENCE:MATERIALS IN ELECTRONICS,2003,14:441.
[14]	H K Shin;D J Lockwood;J M Baribeau .[J].Solid State Communications,2000,114:505.
[15]	B V Kamenev;L Tsybeskov;J M Baribeau;D J Lockwood .[J].Applied Physics Letters,2004,84:1293.
[16]	G Theodorou;P C Kelires;C Tserbak .[J].Physical Review B:Condensed Matter,1994,50:18355.
[17]	D V Lang;R People;J C Bean;A M Sergent .[J].Applied Physics Letters,1985,47:1333.
[18]	H Lafontaine;N L Rowell;S Janz;D X Xu .[J].Journal of Applied Physics,1999,86:1287.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate

参考文献