用溶胶-凝胶法在Pt/Ti/SiO2/Si(001)基片上制备了BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.05O3(BFMO/PZT/BFMO)集成薄膜,采用X射线衍射仪分析了其物相结构;采用铁电测试仪考察了该集成薄膜与铂极构成的铁电电容器的性能.结果表明:该集成薄膜结晶较好,除BFMO、PZT及基片的衍射峰外没有其它衍射峰存在;当电场强度为0.7 MV·cm-1时,Pt/BFMO/PZT/BFMO/Pt电容器的电滞回线对称性良好,剩余极化强度为17.9μC·cm-2,矫顽力为0.12 MV·cm-1;在电场强度为0.4 MV·cm-1下测得的铁电电容器漏电流密度为2×10-5A·cm-2,电容器在经过1010次反转后未出现明显的疲劳现象.
参考文献
[1] | Seong Kon Kim;Young Ho Seo .Fabrication and characterization of the piezoelectric microtransformer based on microelectromechanical systems[J].Applied physics letters,2006(26):263510.1-263510.3. |
[2] | Padmaja Guggilla;Ashok K. Batra;James R. Currie .Pyroelectric ceramics for infrared detection applications[J].Materials Letters,2006(16):1937-1942. |
[3] | Zuyan Shen;Wan Y. Shih;Wei-Heng Shih .Self-exciting, self-sensing PbZr_(0.53)Ti_(0.47)O_(3)/SiO_(2) piezoelectric microcantilevers with femtogram/Hertz sensitivity[J].Applied physics letters,2006(2):023506-1-023506-3-0. |
[4] | June Key Lee;Tae-Young Kim;Ilsub Chung .Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr_(0.53)Ti_(0.47))O_(3)/Pt ferroelectric capacitor[J].Applied physics letters,1999(3):334-336. |
[5] | Matthew Dawber;J. F. Scott .A model for fatigue in ferroelectric perovskite thin films[J].Applied physics letters,2000(8):1060-1062. |
[6] | Ye Chen;Paul C. McIntyre .Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability[J].Applied physics letters,2007(23):232906-1-232906-3-0. |
[7] | Z. Ye;M. H. Tang;C. P. Cheng;Y. C. Zhou;X. J. Zheng;Z. S. Hu .Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin films[J].Journal of Applied Physics,2006(9):094101.1-094101.5. |
[8] | Y. Wang;C. Ganpule;B. T. Liu;H. Li;K. Mori;B. Hill;M. Wuttig;R. Ramesh;J. Finder;Z. Yu;R. Droopad;K. Eisenbeiser .Epitaxial ferroelectric Pb(Zr,Ti)O_(3) thin films on Si using SrTiO_(3) template layers[J].Applied physics letters,2002(1):97-99. |
[9] | Li YW;Sun JL;Chen J;Meng XJ;Chu JH .Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr-0.5,Ti-0.5)O-3 multilayer films derived by chemical solution deposition[J].Applied physics letters,2005(18):2902-1-2902-3-0. |
[10] | S. K. Singh;H. Ishiwara;K. Sato;K. Maruyama .Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO_3 thin films[J].Journal of Applied Physics,2007(9):094109.1-094109.5. |
[11] | Nagaraj B.;Song TK.;Sawhney T.;Ramesh R.;Aggarwal S. .Leakage current mechanisms in lead-based thin-film ferroelectric capacitors[J].Physical Review.B.Condensed Matter,1999(24):16022-16027. |
[12] | Ju Cheol Shin;Cheol Seong Hwang;Hyeong Joon Kim;Soon Oh Park .Leakage current of sol-gel derived Pb(Zr,Ti)O_3 thin films having Pt electrodes[J].Applied physics letters,1999(21):3411-3413. |
[13] | Zhiyong Zhong;Hiroshi Ishiwara .Variation of leakage current mechanisms by ion substitution in BiFeO_(3) thin films[J].Applied physics letters,2009(11):112902-1-112902-3. |
[14] | Mohamed-Tahar Chentir;Emilien Bouyssou;Laurent Ventura;Christine Anceau .Leakage current evolution versus dielectric thickness in lead zirconate titanate thin film capacitors[J].Journal of Applied Physics,2009(6):061605-1-061605-7-0. |
[15] | Pabst GW;Martin LW;Chu YH;Ramesh R .Leakage mechanisms in BiFeO3 thin films[J].Applied physics letters,2007(7):72902-1-72902-3-0. |
[16] | Khan MA;Comyn TP;Bell AJ .Leakage mechanisms in bismuth ferrite-lead titanate thin films on Pt/Si substrates[J].Applied physics letters,2008(7):72908-1-72908-3-0. |
[17] | Zubko P;Jung DJ;Scott JF .Electrical characterization of PbZr0.4Ti0.6O3 capacitors[J].Journal of Applied Physics,2006(11):14113-1-14113-7-0. |
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