采用脉冲激光沉积法在Pt/Ti/SiO2/Si衬底上制备了BaTiO3/SrTiO3 (BTO/STO)多层膜.XRD结果表明:多层膜呈现出明显的(110)择优取向,与Ba0.5Sr0.5TiO3单层膜相比,多层膜的相对介电常数得到了明显的增强,而介电损耗仍然保持在较低的水平.室温下频率为10kHz时,BTO/STO(n=6)多层膜的相对介电常数为506,而介电损耗仅为0.033.薄膜的C-V特性研究表明:多层膜呈现出较好的电容调谐度.
参考文献
| [1] | Roy D;Krupanidhi S B .[J].Applied Physics Letters,1993,62:1056. |
| [2] | Jia Q X;Wu X D;Foltyn S R et al.[J].Applied Physics Letters,1995,66:2197. |
| [3] | Tabata H;Tanka H;Kawai T .[J].Applied Physics Letters,1994,65:1970. |
| [4] | Nakagawara O;Shimuta T;Makino T et al.[J].Applied Physics Letters,2000,77:3257. |
| [5] | Qu BD.;Johnson DJ.;Prince RH.;Evstigneev M. .Dielectric properties of BaTiO3/SrTiO3 multilayered thin films prepared by pulsed laser deposition[J].Applied physics letters,1998(11):1394-1396. |
| [6] | O′Neill D;Bowman R M;Gregg J M .[J].Applied Physics Letters,2000,77:1520. |
| [7] | Ge S B;Shen M R;Ning Z Y et al.[J].Journal of Materials Science Letters,2001,20:2105. |
| [8] | Zhu X H;Chong N;Chan H L et al.[J].Applied Physics Letters,2002,80:3376. |
| [9] | Ge S B;Shen M R;Ning Z Y .563[J].Chinese Physics Letters,2002,19:563. |
| [10] | Jeon Y A;Shin W C;Seo T S et al.[J].Journal of Materials Research,2002,17:2831. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%