以硫酸溶液为电解质,采用两步电化学阳极氧化法制备了氧化铝有序多孔膜,孔径为20nm,孔间距为50nm左右,孔洞密度为4.5×1010个/cm2.以此多孔膜为模板,以脉冲信号为沉积电压制备了金属Ni纳米线阵列,单根纳米线直径为15~20nm,择优取向为Ni(220)晶面.磁滞回线结果表明垂直于膜面的方向为易磁化方向,当磁场垂直于膜面时,矩形比高达90.5%,矫顽力为63.84kA/m.
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