硅薄膜中的结构缺陷研究进展

功能材料, 2010, 41(z1): 1-5.

硅薄膜中的结构缺陷研究进展

赵彦辉 ^1, , 肖金泉 ^2, , 黄荣芳 ^3, , 闻火 ^4, , 闻立时 ^5,

1.中国科学院,金属研究所,辽宁,沈阳,110016

2.中国科学院,金属研究所,辽宁,沈阳,110016

3.武汉华硅太阳能科技有限责任公司,湖北,武汉,430074

4.武汉华硅太阳能科技有限责任公司,湖北,武汉,430074

5.中国科学院,金属研究所,辽宁,沈阳,110016

基金项目: 电子科技大学电子薄膜与集成器件国家重点实验室开放课题(KFJJ200902)

关键词：硅薄膜 , 缺陷 , 缺陷研究方法 , 转换效率

Research progress of structure defects in silicon thin films

硅薄膜作为制备硅薄膜太阳电池的重要材料,得到了广泛研究和应用,而硅薄膜中的各种缺陷及缺陷密度则对薄膜电池的转换效率和稳定性有着至关重要的影响.对硅薄膜中的缺陷种类、缺陷研究方法以及缺陷对薄膜性能的影响进行总结,期望对提高和改善硅薄膜质量乃至硅薄膜太阳电池转换效率和稳定性提供一定的指导.

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硅薄膜中的结构缺陷研究进展

Research progress of structure defects in silicon thin films

参考文献