With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.
参考文献
| [1] | Yagyu H.;Mori Y.;Hatta A.;Ito T.;Kitabatake M.;Sakakima H.;Hirao T.;Hiraki A.;Deguchi M. .ION IMPLANTATION IN PREDOPED CVD DIAMOND[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):271-274. |
| [2] | DONG Li-fang,Ma Bo-Qin,Wang Zhi-Jun.Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition[J].中国物理（英文版）,2004(10):1597-1600. |
| [3] | Garrido JA;Heimbeck T;Stutzmann M .Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels[J].Physical review, B. Condensed matter and materials physics,2005(24):5310-1-5310-8-0. |
| [4] | Grot S.A.;Gildenblat G.S. .The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film[J].IEEE Electron Device Letters,1990(2):100-102. |
| [5] | Landstrass M I;Ravi K V .Hydrogen passivation of electrically active defects in diamond[J].Applied Physics Letters,1989,55(14):1391. |
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