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采用单相的ITO复合粉末经放电等离子烧结法(SPS)快速制备了ITO靶材.研究了SPS的主要工艺参数对ITO靶材致密化的影响.结果表明:靶材的相对密度随着烧结温度的升高而增大,在1000 ℃时达到最大值;在1000 ℃下烧结,延长保温时间使相对密度降低;在较低的温度下烧结时,延长保温时间有利于提高靶材的致密度;相对密度随着烧结压力的增加而增大;升温速率过快不利于靶材的致密化.对烧结试样的相组成和化学成分研究表明:不同温度下制备的ITO靶材均有少量的SnO_2相析出,并有不同程度的失氧,铟锡的质量分数略大于ITO原粉中铟锡的质量分数.

ITO targets were fast prepared by SPS from single-phase ITO powder. The densification of the ITO targets as a function of the SPS process parameters was researched systematically. The results indicated that: the relative density of samples increased with the temperature increasing and reached the maximum value when sintered at 1000 ℃ and decreased with long holding time at the same temperature. When sintering at relatively lower temperature, increasing holding time was favorable to increase the density of ITO targets. The relative density of ITO targets increased with the pressure increasing. Too fast heating rate was unfavorable to increase the densification of targets. The analysis of phase composition and chemical constitution indicated that: little SnO_2 precipitated and oxygen loss took place in different degree when sintered at different temperature. In/Sn element ratio of ITO targets was slightly larger than that of the ITO powder.

参考文献

[1] Ray S;Banerjee R;Basu N et al.[J].Journal of Applied Physics,1983,54(06):3497.
[2] 张树高,吴义成,方勋华.ITO靶材热等静压致密化工艺研究[J].粉末冶金材料科学与工程,1999(02):132-136.
[3] Wit J H W D .[J].Solid-State Chemistry,1975,13:192.
[4] Takeuchi T;Ishida T et al.[J].Journal of Materials Science Letters,2002,21:855.
[5] Enoki H;Echigoyaf J et al.[J].Journal of Materials Science,1991,26:4110.
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