以四氯化锡、三氯化铟和氨水为原料,采用化学共沉淀法制备了In掺杂SnO_2粉体.实验采用XRD和Zeta电位分析仪对In掺杂SnO_2粉体的物化性能进行了研究.结果表明:当In掺杂浓度为2 mol%时,掺杂SnO_2粉体具有较低的Zeta电位.相对于纯SnO_2粉体,In掺杂改变了SnO_2的晶胞参数并增大了其晶胞体积.
In-doped tin oxide powders were prepared by a chemical coprecipitation process using tin tetrachloride, indium trichloride and ammonia as raw materials. The properties of SnO_2-based powders doped with In were studied systematically by X-ray diffraction (XRD) and Zeta potential analyzer. The results showed Zeta potential of In-doped SnO_2 powders is the lowest when the fraction of In-doped is 2 mol%. Compared with the pure SnO_2, the presence of the dopant alters slightly the crystal cell parameter of SnO_2 and increases significantly its crystal cell volume.
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