采用高纯HgI_2多晶原料,利用改进的静态升华法生长了α-HgI_2晶体.生长15天的晶体生长界面呈小平面,而生长29天的晶体生长界面呈椭圆形,表明α-HgI_2晶体气相生长中存在生长形貌转变的现象.形貌转变的原因可能是自由碘在生长界面富集和不同晶面生长速率差异所致.生长29天的晶体体积约为1.3cm~3,可能达到了该条件下的最大体积.
α-HgI_2 crystal is grown using improved static sublimation method with high purity raw materials. The growing interface presents several facets after 15-day growth, whereas the other is of intact shape with smooth rounded surface after 29-day growth, which indicates the changing of appearance of growing interface during growth. The analysis shows that the increase of iodide concentration of solid-gas interface and the competition of growing velocity of different crystal planes will result in destroying of growing pattern. The volume 1.3cm~3 of the as-grown crystal after 29-day growth may be the utmost one in this growth conditions.
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