ZnO/n-Si异质结的I-V、C-V特性研究

功能材料与器件学报 , 2012, 18(6): 443-448.

ZnO/n-Si异质结的I-V、C-V特性研究

熊超 ^1, , 肖进 ^2, , 丁丽华 ^3, , 陈磊 ^4, , 袁洪春 ^5, , 徐安成 ^6, , 周详才 ^7, , 朱锡芳 ^8, , 潘雪涛 ^9,

1.常州工学院光电工程学院,常州,213002;华南理工大学电子与信息学院,广州,510641

2.常州工学院光电工程学院,常州,213002

3.常州工学院光电工程学院,常州,213002

4.常州工学院光电工程学院,常州,213002

5.常州工学院光电工程学院,常州,213002

6.常州工学院光电工程学院,常州,213002

7.常州工学院光电工程学院,常州,213002

8.常州工学院光电工程学院,常州,213002

9.常州工学院光电工程学院,常州,213002

基金项目: 常州工学院自然科学基金(YN1105) 常州市科技项目(CJ20120001) 国家自然科学基金(11247323) 江苏省高校自然科学基金(12KJD510001)

关键词： ZnO/n-Si异质结 , I-V特性 , C-V特性 , 内建电势 , 界面态

Study on ZnO/p-Si heterojunction by I-V and C-V characteristic

本文通过磁控溅射Al掺杂的ZnO陶瓷靶,在n-Si片上沉积n型电导的ZnO薄膜而制备的ZnO/n-Si异质结,并通过测试其光照下的I-V、C-V特性对其光电特性以及载流子输运特性与导电机理进行了研究.研究表明ZnO/n-Si异质结存在良好的整流特性与光电响应,可以广泛应用在光电探测和太阳能电池等领域.由于在ZnO/n-Si异质结界面处的导带补偿与价带补偿相差太大的缘故,在正向电压超过0.8V时,导电机理为空间电荷限制电流导电.同时研究表明ZnO/n-Si异质结界面存在大量界面态,可以通过减小界面态可以进一步提高其光电特性.

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