以ZnO为沟道层的薄膜晶体管制备研究

功能材料, 2008, 39(7): 1144-1150.

以ZnO为沟道层的薄膜晶体管制备研究

张新安 ^1, , 张景文 ^2, , 张伟风 ^3, , 王东 ^4, , 毕臻 ^5, , 张杰 ^6, , 侯洵 ^7,

1.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049;河南大学,物理与电子学院,河南,开封,475001

2.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

3.河南大学,物理与电子学院,河南,开封,475001

4.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

5.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

6.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

7.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049;河南大学,物理与电子学院,河南,开封,475001

基金项目: 陕西省科技攻关计划(2005K04-G6)

关键词： ZnO 薄膜 , 薄膜晶体管 , 绝缘层 , 光学透过率

The fabrication of thin film transistors with ZnO as active channel layer

采用光刻剥离工艺和射频磁控溅射法分别在(100)硅片和ITO玻璃衬底上制备了以氧化锌为沟道层的底栅式薄膜晶体管(ZnO-TFT).用X射线衍射仪、原子力显微镜对生长在绝缘层上的ZnO薄膜进行了表征.在硅衬底ZnO-TFT中,热氧化生长的二氧化硅薄膜作为绝缘层,金属铝用作源漏电极,该器件工作在N沟道增强模式,其阈值电压为8V,电流开关比为5×103,电子的场迁移率达到0.61cm2/(V·s).在以ITO玻璃为衬底的透明ZnO-TFT中,分别采用了SiO2、Al2O3、SiNx、PbTiO3薄膜作为绝缘层,实验表明生长在不同绝缘层上的ZnO薄膜都有很高的c轴择优取向,透明ZnO-TFT在可见光波段的平均透过率达到85%.

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