以聚苯乙烯胶体晶体为模板,采用磁控溅射方法制备了孔径分别为1.2,2.4,3.4,4.5和5.6 μm的Ni微网格透明电极.利用扫描电子显微镜(SEM)、紫外可见分光光度计(UV-Vis)和四探针测试仪考察了微网格孔径对电极透过率及导电性能的影响.发现随网格孔径增大,电极透过率逐渐降低,导电性能逐渐增强.微网格透明电极在紫外与可见光区具备优良的透明导电性能.微网格结构的理论计算和原子力显微镜(AFM)分析结果表明,随着模板中PS球直径的增大,Ni在基底上覆盖厚度的线性增大,是导致微网格透明电极透光性能下降和导电性能增强的根本原因.
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