采用射频磁控溅射法在玻璃衬底上低温制备出高质量的镓掺杂氧化锌(ZnO:Ga)透明导电膜,对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究.制备的ZnO:Ga是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向.薄膜的最低电阻率达到了3.9×10-4Ωcm,方块电阻~4.6Ω/□,薄膜具有良好的附着性,在可见光区的平均透过率达到90%以上.
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