TEM STUDY OF C-B_4C-SiC COMPOSITES WITH SILICON ADDITIVE

金属学报(英文版), 1995, 8(2): 92-96.

TEM STUDY OF C-B_4C-SiC COMPOSITES WITH SILICON ADDITIVE

ZHAO Lihua , WU Lijun , HUANG Qizhong , YANG Qiaoqin 1)(Material Research and Test Center , Hunan University , Changsha , China)2)(Powder Metallurgy Research Institute , Center-South University of Technology , Changsha , China)3)(Laboratory of Atomic Imaging of Solids , Institute of Metal Research , Chinese Academy of Science , Shenyang , China)Manuscript received 18 April 1995

Keywords： :C-B_4C-SiC composite , null

C-B4C-SiC composites with silicon additive obtained by the hot press sintering method are studied by means of transmission electron microscopy(TEM).When the specimens are heated to 1800℃,their structure does not change.When the specimens are heated to 2000℃,carbon begins to graphitize. Moreover,two monoclinic phases are observed.One monoclinic phase named as the M phase belongs to C-center monoclinic lattice with a=0.90nm,b=0.59nm,c=0.54nm and β=119.3°.The other monoclinic phase named as the Ml phase also belongs to C-center monoclinic lattice but with a=0.85nm,b=0.49nm,c=0.53nm and β=123.6°.

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TEM STUDY OF C-B_4C-SiC COMPOSITES WITH SILICON ADDITIVE

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