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氧化钒薄膜及其在微电子和光电子领域中的应用已成为国际上新颖功能材料研究的热点之一.本文综述了V2O5和VO2薄膜电学性能与薄膜组分和结构的相关性,比较了不同工艺制备的氧化钒薄膜的电学性能差异.

参考文献

[1] 申文.无机化学丛书[M].北京:科学出版社,1998:224.
[2] Partlow D P;Gukovich S R;Radford K C et al.[J].Journal of Applied Physics,1991,70:443.
[3] Kucharczyk D;Niklewski T .[J].Journal of Applied Crystallography,1979,12:370.
[4] 吴诚.非制冷红外焦平面技术述评(上)[J].红外技术,1999(01):6.
[5] Fuls E N;Hensler D H;Ross A R .[J].Applied Physics Letters,1967,10:199.
[6] 王忠春,陈晓峰,李智勇,胡行方.溅射总压对氧化钒薄膜的结构及电致变色性质的影响[J].硅酸盐学报,1999(01):28-33.
[7] 磁控溅射制备的氧化钒薄膜的结构研究[J].兰州大学学报,1999(01):62.
[8] Chain E E .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1986,A4:432.
[9] Chain E E .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1987,a5:1836.
[10] DeNatale J F;Hood P J;Harker A B .[J].Journal of Applied Physics,1989,66:5844.
[11] Case F C .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1989,A7:194.
[12] Kusano E;Theil J A .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1989,A7:1314.
[13] Nikitin S E;Khakhaev T A;Chudnovskii F A et al.[J].Physics of the Solid State,1993,35:1393.
[14] Griffiths C H;Eastwood H K .[J].Journal of Applied Physics,1974,45:2201.
[15] Jerominek H;Picard F;Vincent D .[J].Optical Engineering,1993,32:2092.
[16] 吴广明;吴永刚;倪星元 等.[J].功能材料,1999,30(04):404.
[17] Case F C .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1984,A2:1509.
[18] Case F C .[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1987,A5:1762.
[19] Case F C .[J].Applied Optics,1987,26:1550.
[20] Kosuge K .[J].Journal of Physics and Chemistry of Solids,1967,28:1613.
[21] MacCHesney J B;Potter J F;Guggenheim H J .[J].Journal of the American Ceramic Society,1968,51:176.
[22] Idem .[J].Journal of the Electrochemical Society,1968,115:52.
[23] Yin Dachun;XU Niankan;Zhang Jingyu .[J].Journal of Physics D:Applied Physics,1996,29:1051.
[24] Takaskhi Y;Kanamori M;Hashimoto H et al.[J].Journal of Materials Science,1989,24:192.
[25] Borek M;Qian F;Nagabushnam V et al.[J].Applied Physics Letters,1993,63:3288.
[26] Kim D H;Kwok H S .[J].Applied Physics Letters,1994,65:3188.
[27] Nagushima M;Wada H.[J].Journal of Materials Research,1997(12):416.
[28] Nagushima M;Wads H .[J].Journal of Vacuum Science and Technology,1998,A16:45.
[29] Greenberg C B .[J].THIN SOLID FILMS,1983,110:73.
[30] Chang H L M;Gao Y;Zhang T J et al.[J].THIN SOLID FILMS,1992,216:4.
[31] Remka R L;Walseer R M;Bene R V .[J].THIN SOLID FILMS,1979,61:73.
[32] Felde B.;Schalch D.;Scharmann A.;Werling M.;Niessner W. .PLASMON EXCITATION IN VANADIUM DIOXIDE FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):61-65.
[33] Jin P.;Tanemura S.;Nakao S. .High-energy W ion implantation into VO2 thin film[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,1998(1/4):419-424.
[34] Benmoussa M.;Bennouna A.;Ameziane EL.;Ibnouelghazi E. .STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF SPUTTERED VANADIUM PENTOXIDE THIN FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1/2):22-28.
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