钎焊和扩散焊制备的Sn/Cu接头在无磁场下不同温度时效,研究接头界面处金属间化合物(IMC)层的生长行为.结果表明:两种接头界面IMC层在时效初始时刻的横截面和形貌均不同,在时效过程中的生长行为类似,钎焊和扩散焊接头界面IMC层的生长激活能分别为116和94 kJ/mol.为研究强磁场对界面IMC层生长行为的影响,两种试样在190 ℃、磁场强度为8 T时效.实验结果表明:两种接头界面IMC层的生长动力学相同,但晶粒形貌和晶体取向差别明显.
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