近年来,低维热电材料以其优越的性能而受到研究人员的关注,但合成方法多局限于成本较高的物理法.本文采用简便的化学浴沉积法成功地制备出硒化铋纳米结构薄膜.以硝酸铋、硒代硫酸钠分别作为铋源和硒源,以氨三乙酸作为配位剂,在硅片上沉积出由[001]取向的纳米片组成的硒化铋纳米结构薄膜.薄片厚度在50～100nm.性能表征显示合成出的薄膜室温下电导和赛贝克系数分别为9.2×10~3Sm~(-1)和-98μVK~(-1).该法具有低成本、易操作、易于大规模生长等优点,为薄膜的器件化打下基础.
Recently, low dimensional thermoelectric materials have attracted various interests because of their promising transport properties. However, synthesis methods were often restricted to high-cost vapor methods. In the present work, nanostrucutred Bi_2Se_3 films were prepared by facial chemical bath deposition (CBD) method. Bi(NO_3)_3 and Na_2SeSO_3 were used as bismuth and selenium sources, and nitrilotriacetic acid and silicon as chelated reagent and substrate, respectively. The synthesized Bi_2Se_3 films were composed of (001) orientation nanosheets, 50-100nm in. thickness. Electrical conductivity and Seebeek coefficient at room temperature are 9.2×10~3 Sm~(-1) and -98μVK~(-1) , respectively. Synthesis method used here is low-cost, easy-operated and scalable-produced, which opens a new route for the synthesis of thermoelectric films.
参考文献
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