用质谱、朗缪尔探针诊断技术研究了氢稀释的SiCl4作为源气体,用等离子体增强化学气相方法进行纳米晶硅薄膜的生长.进一步研究了氢稀释比率对SiCl4等离子体中SiCln(n=0～2)基团浓度的影响.等离子体中,平均电子能量和电子密度分别随着氢稀释比率的增加而达到9.25eV和3.7×109cm-3.结果发现,在0.4～0.67范围的氢稀释比率对于形成SiCln(n=0～2)基团很有利.在这个范围,平均电子能量和电子密度都有较大的值.生成较多的SiCln(n=0～2)基团将有利于提高薄膜沉积速率和薄膜质量.
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