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利用磁控溅射方法在Si(100)衬底上首先生长SrMnO3(SMO)作为缓冲层,再沉积La0.8Sr0.2MnO3(LSMO)薄膜,得到(110)面择优生长的LSMO/SMO双层结构.利用X射线衍射仪分析了SMO缓冲层的结构特征对LSMO薄膜择优取向生长的影响;利用Rutherford背散射(RBS)分析了LSMO/SMO间的界面情况.结果表明:以SMO作为单一缓冲层时,不仅可以实现LSMO薄膜在Si(100)衬底上的(110)面的择优生长,而且LSMO/SMO的界面扩散现象也不明显.

参考文献

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