采用化学气相沉积技术在四种不同沉积温度下制备了铝化物涂层,采用X-射线衍射仪、扫描电子显微镜和能谱仪研究了不同沉积温度下涂层的相结构、微观形貌和成分.结果表明,涂层的相结构、微观形貌和成分受沉积温度的影响明显.沉积温度越高,涂层越趋于形成均质的β-NiAl相,涂层表面多边形网格状形貌越均匀,网格内晶粒生长越密实.扩散区内富集大量的铬、钼和钨元素,其相应的析出物会形成扩散障碍层.
参考文献
| [1] | 林翠,杜楠,赵晴.高温涂层研究的新进展[J].材料保护,2001(06):4-7. |
| [2] | 张鹏飞,李建平,陆峰,蔡妍.DZ40M合金Al-Si涂层高温防护性能研究[J].航空材料学报,2010(05):63-66. |
| [3] | 刘培生,管恒荣,孙晓峰,金涛,杨克努,梁开明,顾守仁.DZ40M合金铝化物涂层的高温氧化蚀点现象[J].材料工程,2000(05):7-8,44. |
| [4] | Yu Z;Dharmasena KP;Hass DD;Wadley HNG .Vapor deposition of platinum alloyed nickel aluminide coatings[J].Surface & Coatings Technology,2006(6):2326-2334. |
| [5] | Voudouris N.;Angelopoulos GN.;Christoglou C. .Formation of aluminide coatings on nickel by a fluidised bed CVD process[J].Surface & Coatings Technology,2001(2/3):275-282. |
| [6] | S. Leone;F.C. Beyer;H. Pedersen;S. Andersson;0. Kordina;A. Henry;E. Janzen .Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2011(10):3074-3080. |
| [7] | Zhenhua Xu;Rende Mu;Limin He .Effect of diffusion barrier on the high-temperature oxidation behavior of thermal barrier coatings[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2008(1/2):471-478. |
| [8] | 刘刚,王文,牛焱,吴维.Pt-Al涂层进展[J].腐蚀科学与防护技术,2001(02):106-108. |
| [9] | Das D.K.;Singh V. .Effect of Prealuminizing Diffusion Treatment on Microstructural Evolution of High-Activity Pt-Aluminide Coatings[J].Metallurgical and Materials Transactions, A. Physical Metallurgy and Materials Science,2000(8):2037-2047. |
| [10] | P. S. Liu;K. M. Liang .A new way to evaluate the high-temperature oxidation life of aluminide coatings on Co-base superalloys in air[J].Surface & Coatings Technology,2000(1):64-68. |
| [11] | Lee JW;Kuo YC .Cyclic oxidation behavior of a cobalt aluminide coating on Co-base superalloy AMS 5608[J].Surface & Coatings Technology,2005(5/6):1225-1230. |
| [12] | Yoon JK.;Kim GH.;Byun JY.;Lee JK.;Kim JS.;Hong KT. .Kinetics of chemical vapor deposition of Si on Ni substrates from a SiCl4-H-2 gas precursor mixture[J].Surface & Coatings Technology,2003(1):65-71. |
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