等离子体辅助MOCVD生长的ZnO薄膜退火改性研究

功能材料, 2001, 32(5): 502-503.

等离子体辅助MOCVD生长的ZnO薄膜退火改性研究

王金忠 ^1, , 王新强 ^2, , 王剑刚 ^3, , 姜秀英 ^4, , 杨树人 ^5, , 杜国同 ^6, , 高鼎三 ^7, , ^8, , ^9, , ^10, , ^11,

1.吉林大学

2.吉林大学

3.吉林大学

4.吉林大学

5.吉林大学

6.吉林大学

7.吉林大学

8.Material Research Center, Northwestern University,

9.Material Research Center, Northwestern University,

10.Material Research Center, Northwestern University,

11.Material Research Center, Northwestern University,

基金项目: 国家自然科学基金(69896260) 吉林省科研项目(59910161983)

关键词：等离子体辅助MOCVD , X光衍射 , 光致发光 , 激光阈值

The studies of the annealed ZnO films grown by plasma-assisted MOCVD

用等离子体辅助MOCVD法在蓝宝石(α-A12O3)上生长了ZnO薄膜,测试了其退火和未退火薄膜的电阻率、电子浓度、迁移率、激光阈值,并通过X光衍射、光致发光方法表征了ZnO薄膜的质量,其结果是:退火薄膜的电子浓度低达1015/cm3量级、激光阈值降低近30倍、X光衍射峰半高宽是0.29°、在388nm附近的光致发光谱峰半高宽为0.32nm.这表明退火使ZnO薄膜的质量得到大幅度提高.

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