利用脉冲激光沉积(PLD)技术,在Si(100)衬底上制得了导电氧化铱(IrO2)薄膜.讨论了沉积参数(O2分压、衬底温度)对IrO2薄膜的结构、表面形貌和导电性的影响.结果表明:20 Pa为最佳O2分压、400℃～500℃为适宜的沉积温度,此条件下制得的IrO2薄膜结晶完整,组织均匀、形状一致,排列致密,其最低电阻率约为42μΩ·cm.
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