采用射频磁控溅射法在Si衬底上制备新型栅介质SrHfON薄膜.采用X射线衍射(XRD)仪、高分辨透射电镜(HRTEM)和X射线光电子谱(XPS)分析退火对SrHfON薄膜的界面形态、薄膜的结构和电学性能的影响.结果表明,SrHfON薄膜经900℃退火后仍保持非晶态,表现出良好的热稳定性.SrHfON薄膜与Si衬底的界面主要由HfSixOy和SiO2组成.以SrHfON薄膜为栅介质的MOS电容结构具有较小的漏电流密度,并且漏电流密度随着退火温度的升高而减小.在外加偏压(Vg)为+1V时样品在沉积态和900℃退火后的漏电流密度分别为4.3× 10-6和1.2×10-7A/cm2.研究表明,SrHfON薄膜是一种很有希望替代SiO2的新型栅介质材料.
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