本文采用射频反应磁控溅射氧化铪钯的方法,在硅衬底成功制备了高介电HfOxNy薄膜.利用XRD研究了氮的参入对薄膜微结构的影响,结果表明,氮的参入可以提高薄膜的晶化温度；傅立叶红外吸收光谱研究表明高温退火导致了HfOxNy薄膜与Si之间界面层的生长,并且随着退火温度的升高,界面层逐步增厚.
参考文献
| [1] | K. A. Ellis;R. A. Buhrman .Boron diffusion in silicon oxides and oxynitrides[J].Journal of the Electrochemical Society,1998(6):2068-2074. |
| [2] | K. A. Ellis;R. A. Buhrman .Time-dependent diffusivity of boron in silicon oxide and oxynitride[J].Applied physics letters,1999(7):967-969. |
| [3] | Choi KJ;Kim JH;Yoon SG;Shin WC .Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2004(4):1755-1758. |
| [4] | Alers GB.;Chabal Y.;Lu HC.;Gusev EP.;Garfunkel E. Gustafsson T.;Urdahl RS.;Werder DJ. .Intermixing at the tantalum oxide/silicon interface in gate dielectric structures[J].Applied physics letters,1998(11):1517-1519. |
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