以铜箔为基底采用化学气相沉积法(CVD)制备石墨烯透明导电薄膜,利用SEM、RAMAN、UV和四探针测试仪对产物微观形貌与结构、透光性和导电性能进行表征,讨论反应温度和氢气流量对石墨烯薄膜结构及性能的影响.结果表明:在一定范围内调节氢气流量均可得到石墨烯薄膜;当反应温度为1000℃时,制备的石墨烯缺陷和层数较少,透光性较高.随温度升高;石墨烯薄膜产生的缺陷和层数减少,石墨烯的薄层电阻随生长温度的升高呈线性下降趋势.石墨烯透明薄膜的微观结构与导电性相互关系的研究为其进一步应用于宽波长范围的窗口电极材料提供了理论基础.
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