Ce、V共掺杂BiFeO3多铁薄膜及其电性能研究

功能材料, 2011, 42(3): 421-424.

Ce、V共掺杂BiFeO3多铁薄膜及其电性能研究

袁娜 ^1, , 刘军 ^2, , 刘文秋 ^3, , 李美亚 ^4, , 赵兴中 ^5,

1.武汉大学物理科学与技术学院,湖北,武汉,430072

2.武汉大学物理科学与技术学院,湖北,武汉,430072

3.武汉大学物理科学与技术学院,湖北,武汉,430072

4.武汉大学物理科学与技术学院,湖北,武汉,430072

5.武汉大学物理科学与技术学院,湖北,武汉,430072

基金项目: 国家自然科学基金资助项目(50872097)

关键词： BiFeO3 , sol-gel技术 , 离子掺杂 , 铁电性能 , 漏电流

Enhanced electrical properties in Ce3+ and V5+ co-doped multiferroic BiFeO3 films

采用sol-gel法在Pt/Ti/SiO2/Si衬底上成功制备出纯BiFeO3(BFO)和Ce、V共掺杂Bi0.97 Ce0.03Fe1-x VxO3 (x=0,0.01,0.02,0.03)(BCFVx)薄膜.结构和形貌测试表明,Ce、V共掺杂使得BFO薄膜发生从菱方结构到伪四方结构的转变,且薄膜晶粒变小.介电性能和漏电流测试表明,Ce、V共掺杂BFO薄膜的介电常数增大,介电损耗和漏电流密度减小.铁电性能测试表明在x=0.01时,BCFV0.01薄膜具有较好矩形度的电滞回线,表现出较好的铁电性能.

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Ce、V共掺杂BiFeO3多铁薄膜及其电性能研究

Enhanced electrical properties in Ce3+ and V5+ co-doped multiferroic BiFeO3 films

参考文献